? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 600 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 600 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c7a i dm t c = 25 c, pulse width limited by t jm 14 a i ar t c = 25 c7a e ar t c = 25 c20mj e as t c = 25 c 400 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain ds99320(06/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 1.1 ? pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-263 (ixta) to-220 (ixtp) d (tab) g s g s (tab) ixta 7n60p ixtp 7n60p v dss = 600 v i d25 = 7 a r ds(on) 1.1 ? ? ? ? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixta 7n60p ixtp 7n60p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 4 7 s c iss 1080 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 110 pf c rss 11 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 22 ns t d(off) r g = 50 ? (external) 55 ns t f 20 ns q g(on) 20 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 7nc q gd 7nc r thjc 0.83 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 7 a i sm repetitive 14 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 7 a 500 ns -di/dt = 100 a/ s pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 2 4 6 8 10 12 14 0369121518212427 v d s - volts i d - amperes v gs = 10v 8v 5v 7v 6v fig. 3. output characteristics @ 125 o c 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 1 2 3 4 5 6 7 0123 45678 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 7a i d = 3.5a v gs = 10v fig. 6. drain current vs. case temperature 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 02468101214 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v ixta 7n60p ixtp 7n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixta 7n60p ixtp 7n60p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 1012 1416 1820 22 q g - nanocoulombs v g s - volts v ds = 300v i d = 3.5a i g = 10ma fig. 7. input adm ittance 0 1 2 3 4 5 6 7 8 9 44.5 55.5 66.5 7 v g s - volts i d - amperes t j =125 c 25 c -40 c fig. 8. transconductance 0 1 2 3 4 5 6 7 8 9 10 11 12 012345678910 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 2 4 6 8 10 12 14 16 18 20 0.4 0.5 0.6 0.7 0.8 0.9 1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. maxim um transient therm al resistance 0.10 1.00 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - c / w
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